4H-SiC Trench Structure Fabrication with Al₂O₃ Etching Mask

E-ISSN： 1662-9752|2017|897|371-374

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 371-374

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 725-728

Trans Tech Publications

Access to resources Recommend Favorite

Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 135-138

Trans Tech Publications

Access to resources Recommend Favorite

Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 685-688

Trans Tech Publications

Access to resources Recommend Favorite

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 516-519

Trans Tech Publications

Access to resources Recommend Favorite

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 693-696

Trans Tech Publications

Access to resources Recommend Favorite