Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2017|897|367-370

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 367-370

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract