Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion

E-ISSN： 1662-9752|2017|897|352-355

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 352-355

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