Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate

E-ISSN： 1662-9752|2017|897|283-286

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 283-286

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