Magnetoconductance in InN/GaN quantum wells in topological insulator phase

Author： Bardyszewski W.   Rodak D.   Łepkowski S. P.  

Publisher： Edp Sciences

E-ISSN： 1286-4854|118|2|27001-27001

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.118, Iss.2, 2017-06, pp. : 27001-27001

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Improved Photoluminescence in InGaN/GaN Strained Quantum Wells

By Li-Zhen Ding   Hong Chen   Miao He   Yang Jiang   Tai-Ping Lu   Zhen Deng   Fang-Sheng Chen   Fan Yang   Qi Yang   Yu-Li Zhang  

Chinese Physics Letters, Vol. 31, Iss. 7, 2014-07 ,pp. : 76101-76104

IOP Publishing

Access to resources Recommend Favorite

Accurate modelling of InGaN quantum wells

By Wenzel Hans  

Optical and Quantum Electronics, Vol. 38, Iss. 12-14, 2006-09 ,pp. : 953-961

Springer Publishing Company

Access to resources Recommend Favorite

Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

By  

Chinese Physics B, Vol. 24, Iss. 2, 2015-02 ,pp. : 24219-24223

IOP Publishing

Access to resources Recommend Favorite

Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

By Volovik B.   Kovsh A.   Passenberg W.   Kuenzel H.   Ledentsov N.   Ustinov V.  

Technical Physics Letters, Vol. 26, Iss. 5, 2000-05 ,pp. : 443-445

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Topological quantum transitions in a two-band Chern insulator with n = 2

By  

Journal of Physics: Condensed Matter, Vol. 27, Iss. 4, 2015-02 ,pp. : 45601-45610

IOP Publishing

Access to resources Recommend Favorite