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Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

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Effect of hydrogen implantation in 6H-SiC before and after thermal oxidation

By Arghavani Nia B.   Solaymani S.   Ghaderi A.   Agha Aligol D.   Baghizadeh A.  

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Structural and electrical characterization of n⁺-type ion-implanted 6H-SiC

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Dislocations in 6H-SiC and their influence on electrical propertiesof n-type crystals*

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