Electrical Characterization of the Operational Amplifier Consisting of 4H-SiC MOSFETs after Gamma Irradiation

E-ISSN： 1662-9752|2018|924|984-987

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 984-987

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