Development of a High-Performance 3,300V Silicon Carbide MOSFET

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|770-773

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 770-773

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 731-734

Trans Tech Publications

Access to resources Recommend Favorite

Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 277-280

Trans Tech Publications

Access to resources Recommend Favorite

High Current Silicon Carbide Diodes as Dose Detectors for Hard X-Rays

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 993-996

Trans Tech Publications

Access to resources Recommend Favorite

Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 735-738

Trans Tech Publications

Access to resources Recommend Favorite

Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 92-95

Trans Tech Publications

Access to resources Recommend Favorite