Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|302-305
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 302-305
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :