4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|369-372

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 369-372

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 349-352

Trans Tech Publications

Access to resources Recommend Favorite

Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 277-280

Trans Tech Publications

Access to resources Recommend Favorite

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 302-305

Trans Tech Publications

Access to resources Recommend Favorite

Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 465-468

Trans Tech Publications

Access to resources Recommend Favorite

Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 249-252

Trans Tech Publications

Access to resources Recommend Favorite