The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|469-472

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 469-472

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