Author： Ning Honglong Chen Jianqiu Fang Zhiqiang Tao Ruiqiang Cai Wei Yao Rihui Hu Shiben Zhu Zhennan Zhou Yicong Yang Caigui Peng Junbiao
Publisher： MDPI
E-ISSN： 1996-1944|10|1|51-51
ISSN： 1996-1944
Source： Materials, Vol.10, Iss.1, 2017-01, pp. : 51-51
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Abstract
Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.
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