Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|934|89-94
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.934, 2018-11, pp. : 89-94
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Microstructure and Compressive Properties of Al/Al2O3 Syntactic Foams
Materials Science Forum, Vol. 2018, Iss. 933, 2018-11 ,pp. :