Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

Publisher： IOP Publishing

E-ISSN： 1741-4199|23|11|118504-118507

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.11, 2014-11, pp. : 118504-118507

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Single-Capacitor Electret Impact Microgenerator

By Baginsky Igor   Kostsov Edward   Sokolov Alexey  

Micromachines, Vol. 7, Iss. 1, 2016-01 ,pp. : 5-5

MDPI

Access to resources Recommend Favorite

Frequency Agile Annular Ring Microstrip Antenna Loaded with MOS Capacitor

By Kanaujia B. K.   Singh A. K.   Vishvakarma B. R.  

Journal of Electromagnetic Waves and Applications, Vol. 22, Iss. 10, 2008-10 ,pp. : 1361-1370

Taylor & Francis Ltd

Access to resources Recommend Favorite

THEORETICAL ANALYSIS OF THE TWO-TERMINAL MOS CAPACITOR ON SOI SUBSTRATE

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-67-C4-70

Edp Sciences

Access to resources Recommend Favorite

Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor

By  

Journal of Physics: Conference Series , Vol. 150, Iss. 2, 2009-02 ,pp. : 277-280

IOP Publishing

Access to resources Recommend Favorite

THE SILICON/GERMANIUM (111) INTERFACE : THE ONSET OF EPITAXY

By  

Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. : C8-497-C8-501

Edp Sciences

Access to resources Recommend Favorite