Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

Author： Liaugaudas Gediminas Dargis Donatas Kwasnicki Pawel Arvinte Roxana Zielinski Marcin Jarašiūnas Kęstutis

E-ISSN： 1361-6463|48|2|25103-25109

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.2, 2015-01, pp. : 25103-25109

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