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Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures
Publisher: IOP Publishing
E-ISSN: 1361-6641|30|1|15018-15023
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.30, Iss.1, 2015-01, pp. : 15018-15023
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