Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|1|15018-15023

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.1, 2015-01, pp. : 15018-15023

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