Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Publisher： IOP Publishing

E-ISSN： 1361-6641|29|12|125007-125015

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.12, 2014-12, pp. : 125007-125015

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