Modeling of ∆IBL due to random telegraph noise with considering bit-line interference in NAND flash memory

Publisher： IOP Publishing

E-ISSN： 1361-6641|29|12|125013-125017

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.12, 2014-12, pp. : 125013-125017

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