Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

By Giannoccaro Giovanni   De Leonardis Francesco   Passaro Vittorio M. N.  

Photonics, Vol. 3, Iss. 1, 2016-01 ,pp. : 5-5

MDPI

Access to resources Recommend Favorite

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

By Jemsson Tomas   Machhadani Houssaine   Holtz Per-Olof   Karlsson K Fredrik  

Nanotechnology, Vol. 26, Iss. 6, 2015-02 ,pp. : 65702-65706

IOP Publishing

Access to resources Recommend Favorite

Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m -Sapphire

By Ryu Yongwoo   Jeong Joocheol   Jang Jongjin   Lee Kyuseung   Min Daehong   Kim Jinwan   Kim Minho   Moon Seunghwan   Yoo Geunho   Nam Okhyun  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 9, 2013-09 ,pp. : 6429-6433

American Scientific Publishers

Access to resources Recommend Favorite

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

By Hayashi Hiroaki   Konno Yuta   Kishino Katsumi  

Nanotechnology, Vol. 27, Iss. 5, 2016-02 ,pp. : 55302-55308

IOP Publishing

Access to resources Recommend Favorite

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

By Shen J   Song Y   Lee M L   Cha J J  

Nanotechnology, Vol. 25, Iss. 46, 2014-11 ,pp. : 465702-465707

IOP Publishing

Access to resources Recommend Favorite