Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

Publisher： IOP Publishing

E-ISSN： 1741-3540|31|12|126101-126103

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.31, Iss.12, 2014-12, pp. : 126101-126103

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Abstract

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