Publisher： John Wiley & Sons Inc
E-ISSN： 1520-6440|98|5|9-14
ISSN： 1942-9533
Source： ELECTRONICS & COMMUNICATIONS IN JAPAN, Vol.98, Iss.5, 2015-05, pp. : 9-14
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Abstract
SUMMARYInGaN green laser diodes (LDs) on semipolar {202¯1} GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm are demonstrated. Wall plug efficiencies as high as 7.0–8.9% are realized in the wavelength range of 525–532 nm, exceeding those reported for c‐plane LDs. The lifetime at a case temperature of 55 °C was estimated to be over 5000 hours for an optical output power of 50 mW. These results suggest that InGaN green LDs on the {202¯1} plane are better suited as light sources for applications requiring wavelengths above 525 nm.
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