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John Wiley & Sons Inc

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Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

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Semi‐polar (112¯2)‐GaN templates grown on 100 mm trench‐patterned r‐plane sapphire

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X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a -plane sapphire by metalorganic vapour phase epitaxy

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