Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment

Publisher： IOP Publishing

E-ISSN： 1361-6528|26|46|465203-465214

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.46, 2015-11, pp. : 465203-465214

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles

By HongSang-Hyun   KimJae-Joon   KangJang-Won   JungYen-Sook   KimDong-Yu   YimSang-Youp   ParkSeong-Ju  

Nanotechnology, Vol. 26, Iss. 38, 2015-09 ,pp. : 385204-385209

IOP Publishing

Access to resources Recommend Favorite

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

By Musolino M   Tahraoui A   Fernández-Garrido S   Brandt O   Trampert A   Geelhaar L   Riechert H  

Nanotechnology, Vol. 26, Iss. 8, 2015-02 ,pp. : 85605-85612

IOP Publishing

Access to resources Recommend Favorite

Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

By  

Nanotechnology, Vol. 26, Iss. 12, 2015-03 ,pp. : 125201-125206

IOP Publishing

Access to resources Recommend Favorite

Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

By  

Advanced Materials Technologies, Vol. 3, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Micro‐LEDs: Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates (Adv. Mater. Technol. 1/2018)

By  

Advanced Materials Technologies, Vol. 3, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite