Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Publisher： Trans Tech Publications

E-ISSN： 1662-9779|2015|239|37-71

ISSN： 1012-0394

Source： Solid State Phenomena, Vol.2015, Iss.239, 2015-09, pp. : 37-39

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Copper interconnects for semiconductor devices

By Merchant Sailesh   Kang Seung   Sanganeria Mahesh   Schravendijk Bart   Mountsier Tom  

JOM, Vol. 53, Iss. 6, 2001-06 ,pp. : 43-48

Springer Publishing Company

Access to resources Recommend Favorite

Radiation-Induced Defects in Si after High Dose Proton Irradiation

By  

Defect and Diffusion Forum, Vol. 2017, Iss. 373, 2017-04 ,pp. : 209-212

Trans Tech Publications

Access to resources Recommend Favorite

The Use of Accelerator Techniques to Study Irradiation Damage

By Dutton R.   Lim C. S.  

Canadian Metallurgical Quarterly, Vol. 25, Iss. 2, 1986-04 ,pp. : 169-180

Maney Publishing

Access to resources Recommend Favorite

172 nm Excimer Radiation as a Technology Accelerator for Bio-Electronic Applications

By  

Solid State Phenomena, Vol. 2016, Iss. 255, 2016-10 ,pp. : 366-372

Trans Tech Publications

Access to resources Recommend Favorite

Application of Smart FRP Devices for the Structural Health Monitoring of Heritage Buildings - A Case Study: The Monastery of Sant’Angelo d’Ocre

By  

Key Engineering Materials, Vol. 2017, Iss. 747, 2017-08 ,pp. : 448-455

Trans Tech Publications

Access to resources Recommend Favorite