High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry

E-ISSN： 1741-3540|32|12|128502-128505

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.12, 2015-12, pp. : 128502-128505

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