Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

Author: Hayashi Hiroaki   Konno Yuta   Kishino Katsumi  

Publisher: IOP Publishing

E-ISSN: 1361-6528|27|5|55302-55308

ISSN: 0957-4484

Source: Nanotechnology, Vol.27, Iss.5, 2016-02, pp. : 55302-55308

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