Instability in an amorphous In–Ga–Zn–O field effect transistor upon water exposure

Author: Sharma Bhupendra K   Ahn Jong-Hyun  

Publisher: IOP Publishing

E-ISSN: 1361-6463|49|5|55102-55109

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.49, Iss.5, 2016-02, pp. : 55102-55109

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Abstract