Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature

Author： Xie Jihao   Bu Jianpei   Qin Hongwei   Hu Jifan   Ren Shaoqing   Zhu Gengchang  

Publisher： IOP Publishing

E-ISSN： 1361-648X|28|5|56001-56005

ISSN： 0953-8984

Source： Journal of Physics: Condensed Matter, Vol.28, Iss.5, 2016-02, pp. : 56001-56005

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