Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

By Sheng-Lei Zhao   Yuan Wang   Xiao-Lei Yang   Zhi-Yu Lin   Chong Wang   Jin-Cheng Zhang   Xiao-Hua Ma   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 97305-97309

IOP Publishing

Access to resources Recommend Favorite

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

By Sheng-Lei Zhao   Min-Han Mi   Bin Hou   Jun Luo   Yi Wang   Yang Dai   Jin-Cheng Zhang   Xiao-Hua Ma   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 10, 2014-10 ,pp. : 107303-107307

IOP Publishing

Access to resources Recommend Favorite

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

By Zhang Peng   Zhao Sheng-Lei   Hou Bin   Wang Chong   Zheng Xue-Feng   Zhang Jin-Cheng   Hao Yue   Zhang Peng  

Chinese Physics B, Vol. 24, Iss. 3, 2015-03 ,pp. : 37304-37307

IOP Publishing

Access to resources Recommend Favorite

Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

By Chong Wang   Yun-Long He   Ning Ding   Xue-Feng Zheng   Peng Zhang   Xiao-Hua Ma   Jin-Cheng Zhang   Yue Hao  

Chinese Physics Letters, Vol. 31, Iss. 3, 2014-03 ,pp. : 38501-38504

IOP Publishing

Access to resources Recommend Favorite

Effects of Annealing on Schottky Characteristics in AlGaN/GaN HEMT with Transparent Gate Electrode

By  

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 128501-128504

IOP Publishing

Access to resources Recommend Favorite