Author： Zhang Peng Zhao Sheng-Lei Hou Bin Wang Chong Zheng Xue-Feng Zhang Jin-Cheng Hao Yue Zhang Peng
Publisher： IOP Publishing
E-ISSN： 1741-4199|24|3|37304-37307
ISSN： 1674-1056
Source： Chinese Physics B, Vol.24, Iss.3, 2015-03, pp. : 37304-37307
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Abstract
We present an AlGaN/GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and low-density drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F–) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.
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