High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor

Author: Hushur Anwar   Manghnani Murli H   Werheit Helmut   Dera Przemyslaw   Williams Quentin  

Publisher: IOP Publishing

E-ISSN: 1361-648X|28|4|45403-45414

ISSN: 0953-8984

Source: Journal of Physics: Condensed Matter, Vol.28, Iss.4, 2016-02, pp. : 45403-45414

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract