Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|557-560

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 557-560

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract