Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

By Lu Taiping   Ma Ziguang   Du Chunhua   Fang Yutao   Chen Fangsheng   Jiang Yang   Wang Lu   Jia Haiqiang   Chen Hong  

Applied Physics A, Vol. 114, Iss. 4, 2014-03 ,pp. : 1055-1059

Springer Publishing Company

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Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1137-1140

Trans Tech Publications

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New approaches for growth control of GaN-based HEMT structures

By Hardtdegen H.   Steins R.   Kaluza N.   Cho Y.S.   Wirtz K.   von der Ahe M.   Bay H.L.   Heidelberger G.   Marso M.  

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Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

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PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1122-1129

John Wiley & Sons Inc

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Demonstration of GaN‐based near UV Laser Diodes

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LASER TECHNIK JOURNAL, Vol. 12, Iss. 2, 2015-04 ,pp. : 16-16

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