Boron-Implanted 3C-SiC for Intermediate Band Solar Cells

E-ISSN： 1662-9752|2016|858|291-294

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 291-294

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 299-302

Trans Tech Publications

Access to resources Recommend Favorite

Solar Driven Energy Conversion Applications Based on 3C-SiC

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1028-1031

Trans Tech Publications

Access to resources Recommend Favorite

3C-SiC Microdisks for Visible Photonics

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 711-714

Trans Tech Publications

Access to resources Recommend Favorite

Thin-film polycrystalline Si solar cells on foreign substrates: film formation at intermediate temperatures (700–1300 °C)

By Beaucarne G.

Applied Physics A, Vol. 79, Iss. 3, 2004-08 ,pp. : 469-480

Springer Publishing Company

Access to resources Recommend Favorite

Optical phonons dispersion relation in Si/3C-SiC heterostructures

By Sousa J.M. Vilela R.C. Costa Filho R.N. Nobre E.F. Freire V.N. Albuquerque E.L.

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 270-271

Elsevier

Access to resources Recommend Favorite