Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|297-300

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 297-300

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