Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|181-184

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 181-184

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 371-374

Trans Tech Publications

Access to resources Recommend Favorite

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 47-50

Trans Tech Publications

Access to resources Recommend Favorite

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 133-138

Trans Tech Publications

Access to resources Recommend Favorite

Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 504-507

Trans Tech Publications

Access to resources Recommend Favorite

Stable Phosphorus Passivated SiO

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 139-142

Trans Tech Publications

Access to resources Recommend Favorite