Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|177-180

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 177-180

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract