Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|19-22
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 19-22
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Dislocation Characterization in 4H-SiC Crystals
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :