Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|1107-1111
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 1107-1111
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
High Quality 150 mm 4H SiC Wafers for Power Device Production
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Industrial Approach for Next Generation of Power Devices Based on 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :