Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|61-64
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 61-64
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :