Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|958-961
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 958-961
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
Access to resources
Recommend
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :