3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm² and High Avalanche Withstanding Capability

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|962-965

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 962-965

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