Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|966-969

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 966-969

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 962-965

Trans Tech Publications

Access to resources Recommend Favorite

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 521-524

Trans Tech Publications

Access to resources Recommend Favorite

Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 709-712

Trans Tech Publications

Access to resources Recommend Favorite

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 876-879

Trans Tech Publications

Access to resources Recommend Favorite

Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 829-832

Trans Tech Publications

Access to resources Recommend Favorite