1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

E-ISSN： 1662-9752|2016|858|523-526

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 523-526

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

DLTS Study on Al⁺ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 279-282

Trans Tech Publications

Access to resources Recommend Favorite

Al⁺ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 399-402

Trans Tech Publications

Access to resources Recommend Favorite

Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 773-776

Trans Tech Publications

Access to resources Recommend Favorite

Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 439-442

Trans Tech Publications

Access to resources Recommend Favorite

Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 620-623

Trans Tech Publications

Access to resources Recommend Favorite