Alkali Metal Re-Distribution after Oxidation of 4H-SiC

E-ISSN： 1662-9752|2016|858|677-680

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 677-680

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 348-351

Trans Tech Publications

Access to resources Recommend Favorite

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 340-343

Trans Tech Publications

Access to resources Recommend Favorite

Warpage Structure of 4H-SiC after Implantation and Annealing Processes

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 544-548

Trans Tech Publications

Access to resources Recommend Favorite

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 167-170

Trans Tech Publications

Access to resources Recommend Favorite

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 997-1000

Trans Tech Publications

Access to resources Recommend Favorite