Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|671-676
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 671-676
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High-Mobility SiC MOSFETs with Chemically Modified Interfaces
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :