Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|418-421
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 418-421
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Access to resources
Recommend
Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Warpage Structure of 4H-SiC after Implantation and Annealing Processes
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :