Publisher: Edp Sciences
E-ISSN: 1286-4862|2|10|1979-1998
ISSN: 1155-4304
Source: Journal de Physique I, Vol.2, Iss.10, 1992-10, pp. : 1979-1998
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
THE ELECTRONIC STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS SILICON
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
Model-simulation of light-induced defect creation in hydrogenated amorphous silicon
Journal of Physics: Conference Series , Vol. 619, Iss. 1, 2015-06 ,pp. :
By Chen Huai-Yi Lee Yao-Jen Chang Chien-Pin Koo Horng-Show Lai Chiung-Hui
Journal of Modern Optics, Vol. 60, Iss. 2, 2013-01 ,pp. :
BONDING IN HYDROGENATED AMORPHOUS SILICON
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :