Publisher: Edp Sciences
E-ISSN: 1286-4897|4|4|733-740
ISSN: 1155-4320
Source: Journal de Physique III, Vol.4, Iss.4, 1994-04, pp. : 733-740
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Low-temperature epitaxial growth of in-situ B-doped Si
Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. :