Publisher： Edp Sciences
E-ISSN： 1286-4897|7|1|117-131
ISSN： 1155-4320
Source： Journal de Physique III, Vol.7, Iss.1, 1997-01, pp. : 117-131
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
A photoluminescence study of δ-doped GaAs
Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. :
Access to resources
Recommend
Strain effects on the electronic properties in δ-doped oxide superlattices
Journal of Physics D: Applied Physics, Vol. 48, Iss. 8, 2015-03 ,pp. :
Surface and near surface defects in
By Andrade D P Miwa R H Drevniok B Drage P McLean A B
Journal of Physics: Condensed Matter, Vol. 27, Iss. 12, 2015-04 ,pp. :
β-NMR Study of a buried Mn δ-doped layer in a silicon host
Journal of Physics: Conference Series , Vol. 551, Iss. 1, 2014-12 ,pp. :
Access to resources
Spectral dependence of photocurrent for Cu2s-Cds solar cells
Journal de Physique Lettres, Vol. 39, Iss. 21, 1978-11 ,pp. :